PART |
Description |
Maker |
K7M321825M K7M323625M K7N321801M-QC25 K7N323601M-Q |
1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36 1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7A321800M-QC25 K7A323600M-QC20 K7A321800M-QC20 K7 |
1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes 256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7P321874C |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
K7P323688M |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
K7P323666M K7P321866M |
1Mx36 & 2Mx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7S3236T4C08 K7S3218T4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7I323682C K7I321882C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7A321830C K7A323630C K7A321830C-PC20 K7A323630C-P |
1Mx36 and 2Mx18 Synchronous SRAM 1Mx36Mx18同步SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7N403601M K7N401801M |
128Kx36 & 256Kx18 Pipelined NtRAM-TM
|
SAMSUNG[Samsung semiconductor]
|